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Oxygen

Element density: 1.43 g/L
Electron configuration: [He]2s22p4
Oxidation states: -2

Oxygen

Edges

Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research. 
 

 

Major edges

532

 

Major_Abrupt Onset

 

Minor edges

L1

24

 

 

Considerations

The O K-edge shows rich fine structure and chemical shifts identifying local bonding effects. Small changes in local bonding can have large effects on edge.

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Related spectral data

In2O3 thin film (0 – 950 eV)
   

Al2O3 thin film (0 – 180 eV)

Material analyzed: Al2O3

Related elements: Aluminum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 7 sweeps 16.67 ms dwell

 

Al2O3 thin film (0 – 450 eV)
   

Al2O3 thin film (0 – 450 eV)

Material analyzed: Al2O3

Related elements: Aluminum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 450

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.84e8; total elastic int. / zero-loss int. = 0.18; gain change factor = 654; 20 sweeps 20 ms dwell
 

Al2O3 thin film (0 – 3910 eV)
   

Al2O3 thin film (0 – 3910 eV)

Material analyzed: Al2O3

Related elements: Aluminum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 3910

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.33e9; total elastic int. / zero-loss int. = 0.18; gain change factor = 401; 100 sweeps 10 ms dwell
 

BaO particles on holey C film (0 – 180 eV)
   

BaO particles on holey C film (0 – 180 eV)

Material analyzed: BaO

Related elements: Barium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 20 ms dwell

 

BaO particles on holey C film (0 – 1940 eV)
   

BaO particles on holey C film (0 – 1940 eV)

Material analyzed: BaO

Related elements: Barium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 1940

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.97e8; total elastic int. / zero-loss int. = 0.62; gain change factor = 673; 45 sweeps 16.67 ms dwell

 

CdO particles on holey C film (0 – 180 eV)
   

CdO particles on holey C film (0 – 180 eV)

Material analyzed: CdO

Related elements: Cadmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 0

 

Notes: Serial EELS; 10 sweeps 16.67 ms dwell

 

Al2O3 thin film (0 – 180 eV)
   

CdO particles on holey C film (0 – 910 eV)

Material analyzed: CdO

Related elements: Cadmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 910

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 2.49e9; total elastic int. / zero-loss int. = 0.24; gain change factor = 725; 110 sweeps 16.67 ms dwell

 

CaCO3 thin film (0 – 180 eV)
   

CaCO3 thin film (0 – 180 eV) 

Material analyzed: CaCO3

Related elements: Carbon, Calcium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; from Ca evaporated onto NaCl; 5 sweeps 16.67 ms dwell

 

CaCO3 thin film (0 – 920 eV)
   

CaCO3 thin film (0 – 920 eV) 

Material analyzed: CaCO3

Related elements: Carbon, Calcium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; from Ca evaporated onto NaCl; zero-loss peak intensity = 4.42e8; total elastic int. / zero-loss int. = 0.44; gain change factor = 513; 50 sweeps 20 ms dwell

 

Al2O3 thin film (0 – 180 eV)
   

CaCO3 thin film (330 – 420 eV) 

Material analyzed: CaCO3

Related elements: Carbon, Calcium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 330 – 420

Collection semi-angle effective (mrad): 2

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

CeO2 thin film (0 – 80 eV)
   

CeO2 thin film (0 – 80 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 80

Collection semi-angle effective (mrad): 0

 

Notes: Serial EELS; zero-loss peak intensity = 1.27e9; total elastic int. / zero-loss int. = 0.25; gain change factor = 874; contamination; 20 sweeps 20 ms dwell

 

CeO2 thin film (0 – 380 eV)
   

CeO2 thin film (0 – 380 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.27e9; total elastic int. / zero-loss int. = 0.25; gain change factor = 874; contamination; 20 sweeps 20 ms dwell

 

CeO2 thin film (0 – 950 eV)
   

CeO2 thin film (0 – 950 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 45 sweeps 30 ms dwell

 

CeO2 thin film (350 – 1360 eV)
   

CeO2 thin film (350 – 1360 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 350 – 1360

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

CoO thin film (0 – 180 eV)
   

CoO thin film (0 – 180 eV)

Material analyzed: CoO

Related elements: Cobalt, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 10 ms dwell; all analog

 

CoO thin film (0 – 920 eV)
   

CoO thin film (0 – 920 eV)

Material analyzed: CoO

Related elements: Cobalt, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.90e9; total elastic int. / zero-loss int. = 0.40; gain change factor = 884; 60 sweeps 20 ms dwell

 

CoO thin film (350 – 1360 eV)
   

CoO thin film (350 – 1360 eV)

Material analyzed: CoO

Related elements: Cobalt, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 350 – 1360

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 47 sweeps 20 ms dwell

 

CuO thin film (0 – 1930 eV)
   

CuO thin film (0 – 1930 eV)

Material analyzed: CuO

Related elements: Copper, Oxygen

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 0 – 1930

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 100 sweeps 20 ms dwell

 

Dy2O3 thin film (0 – 390 eV)
   

Dy2O3 thin film (0 – 390 eV)

Material analyzed: Dy2O3

Related elements: Dysprosium, Oxygen

Beam energy (keV): 200

Nominal energy range (eV): 0 – 390

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.83e9; total elastic int. / zero-loss int. = 0.50; gain change factor = 667; 30 sweeps 10 ms dwell

 

Dy2O3 thin film (0 – 950 eV)
   

Dy2O3 thin film (0 – 950 eV)

Material analyzed: Dy2O3

Related elements: Dysprosium, Oxygen

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS

 

Dy2O3 thin film (1220 – 1720 eV)
   

Dy2O3 thin film (1220 – 1720 eV)

Material analyzed: Dy2O3

Related elements: Dysprosium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 1220 – 1720

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS

 

Er2O3 thin film (0 – 380 eV)
   

Er2O3 thin film (0 – 380 eV)

Material analyzed: Er2O3

Related elements: Erbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 2.88e9; total elastic int. / zero-loss int. = 0.16; gain change factor = 792; 50 sweeps 10 ms dwell

 

Er2O3 thin film (0 – 950 eV)
   

Er2O3 thin film (0 – 950 eV)

Material analyzed: Er2O3

Related elements: Erbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 166.6 ms dwell

 

Er2O3 thin film (1280 – 1780 eV)
   

Er2O3 thin film (1280 – 1780 eV)

Material analyzed: Er2O3

Related elements: Erbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 1280 – 1780

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 35 sweeps 40 ms dwell

 

Eu2O3 particles on holey C film (0 – 380 eV)
   

Eu2O3 particles on holey C film (0 – 380 eV)

Material analyzed: Eu2O3

Related elements: Europium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 2.36e9; total elastic int. / zero-loss int. = 0.26; gain change factor = 792; 35 sweeps 10 ms dwell

 

Eu2O3 particles on holey C film (920 – 1930 eV)
   

Eu2O3 particles on holey C film (920 – 1930 eV)

Material analyzed: Eu2O3

Related elements: Europium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 920 – 1930

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 20 ms dwell

 

Gd2O3 thin film (0 – 180 eV)
   

Gd2O3 thin film (0 – 180 eV)

Material analyzed: Gd2O3

Related elements: Gadolinium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 10 sweeps 16.67 ms dwell

 

Gd2O3 thin film (0 – 390 eV)
   

Gd2O3 thin film (0 – 390 eV)

Material analyzed: Gd2O3

Related elements: Gadolinium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 390

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 4.91e8; total elastic int. / zero-loss int. = 0.73; gain change factor = 694; 21 sweeps 20 ms dwell

 

Gd2O3 thin film (940 – 1950 eV)
   

Gd2O3 thin film (940 – 1950 eV)

Material analyzed: Gd2O3

Related elements: Gadolinium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 940 – 1950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 30 ms dwell

 

HfO2 particles on holey C film (0 – 180 eV)
   

HfO2 particles on holey C film (0 – 180 eV)

Material analyzed: HfO2

Related elements: Hafnium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 10 sweeps 16.67 ms dwell; analog only

 

HfO2 particles on holey C film (0 – 3880 eV)
   

HfO2 particles on holey C film (0 – 3880 eV)

Material analyzed: HfO2

Related elements: Hafnium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 3880

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 8.21e8; total elastic int. / zero-loss int. = 0.39; gain change factor = 522; 70 sweeps 10 ms dwell

 

Ho2O3 thin film (0 – 390 eV)
   

Ho2O3 thin film (0 – 390 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 390

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.32e9; total elastic int. / zero-loss int. = 0.20; gain change factor = 826; 25 sweeps 20 ms dwell

 

Ho2O3 thin film (0 – 950 eV)
   

Ho2O3 thin film (0 – 950 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 166 ms dwell

 

Ho2O3 thin film (1200 – 1710 eV)
   

Ho2O3 thin film (1200 – 1710 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 1200 – 1710

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 20 ms dwell

 

In2O3 thin film (0 – 190 eV)
   

In2O3 thin film (0 – 190 eV)

Material analyzed: In2O3

Related elements: Indium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 190

Collection semi-angle effective (mrad): 0.4

 

Notes: Serial EELS; 10 sweeps 30 ms dwell; analog signal

 

In2O3 thin film (0 – 950 eV)
   

In2O3 thin film (0 – 950 eV)

Material analyzed: In2O3

Related elements: Indium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 9.86e8; total elastic int. / zero-loss int. = 0.42; gain change factor = 703; 35 sweeps 30 ms dwell

 

In2O3 thin film (0 – 950 eV)
   

In2O3 thin film (0 – 950 eV)

Material analyzed: In2O3

Related elements: Indium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 9.86e8; total elastic int. / zero-loss int. = 0.42; gain change factor = 703; 35 sweeps 30 ms dwell

 

IrO2 particle on holey C film (0 – 180 eV)
   

IrO2 particle on holey C film (0 – 180 eV)

Material analyzed: IrO2

Related elements: Iridium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 10 sweeps 20 ms dwell

 

IrO2 particle on holey C film (0 – 3870 eV)
   

IrO2 particle on holey C film (0 – 3870 eV)

Material analyzed: IrO2

Related elements: Iridium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 3870

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.39e9; total elastic int. / zero-loss int. = 1.0; gain change factor = 712; 55 sweeps 20 ms dwell

 

Fe2O3 thin film (0 – 180 eV)
   

Fe2O3 thin film (0 – 180 eV)

Material analyzed: Fe2O3

Related elements: Iron, Oxygen

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 0.5

 

Notes: Serial EELS; not in atlas; 15 sweeps 22.2 ms; all pulse counts

 

Fe2O3 thin film (0 – 930 eV)
   

Fe2O3 thin film (0 – 930 eV)

Material analyzed: Fe2O3

Related elements: Iron, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 930

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.14e9; total elastic int. / zero-loss int. = 0.78; gain change factor = 278; 97 sweeps 20 ms dwell

 

Fe2O3 thin film (420 – 920 eV)
   

Fe2O3 thin film (420 – 920 eV)

Material analyzed: Fe2O3

Related elements: Iron, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 420 – 920

Collection semi-angle effective (mrad): 1.5

 

Notes: Serial EELS; 35 sweeps 20 ms dwell

 

La2O3 thin film (0 – 380 eV)
   

La2O3 thin film (0 – 380 eV)

Material analyzed: La2O3

Related elements: Lanthanum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 4.90e8; total elastic int. / zero-loss int. = 0.37; gain change factor = 826; 20 sweeps 10 ms dwell

 

La2O3 thin film (0 – 950 eV)
   

La2O3 thin film (0 – 950 eV)

Material analyzed: La2O3

Related elements: Lanthanum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS

 

La2O3 thin film (700 – 1710 eV)
   

La2O3 thin film (700 – 1710 eV)

Material analyzed: La2O3

Related elements: Lanthanum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 700 – 1710

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 40 sweeps 20 ms dwell

 

Lu2O3 thin film (0 – 380)
   

Lu2O3 thin film (0 – 380 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.30e9; total elastic int. / zero-loss int. = 0.36; gain change factor = 680; 20 sweeps 10 ms dwell

 

Lu2O3 thin film (0 – 900)
   

Lu2O3 thin film (0 – 900 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 900

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 20 ms dwell

 

Lu2O3 thin film (0 – 1960)
   

Lu2O3 thin film (0 – 1960 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 1960

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 50 sweeps 10 ms dwell

 

MgO particles on holey C film (0 – 180 eV)
   

MgO particles on holey C film (0 – 180 eV)

Material analyzed: MgO

Related elements: Magnesium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 40 sweeps 20 ms dwell

 

MgO particles on holey C film (360 – 2390 eV)
   

MgO particles on holey C film (360 – 2390 eV)

Material analyzed: MgO

Related elements: Magnesium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 360 – 2390

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.7e6; total elastic int. / zero-loss int. = 1.1

 

MnO2 thin film (0 – 180 eV)
   

MnO2 thin film (0 – 180 eV)

Material analyzed: MnO2

Related elements: Manganese, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 10 ms dwell; all analog

 

MnO2 thin film (0 – 920 eV)
   

MnO2 thin film (0 – 920 eV)

Material analyzed: MnO2

Related elements: Manganese, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.98e9; total elastic int. / zero-loss int. = 0.70; gain change factor = 580; 60 sweeps 10 ms dwell

 

MnO2 thin film (400 – 900 eV)
   

MnO2 thin film (400 – 900 eV)

Material analyzed: MnO2

Related elements: Manganese, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 400 – 900

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 40 sweeps 16.67 ms dwell

 

MoO3 particle on holey C film (0 – 170 eV)
   

MoO3 particle on holey C film (0 – 170 eV)

Material analyzed: MoO3

Related elements: Molybdenum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 170

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 20 ms dwell

 

MoO3 particle on holey C film (0 – 920 eV)
   

MoO3 particle on holey C film (0 – 920 eV)

Material analyzed: MoO3

Related elements: Molybdenum, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.33e9; total elastic int. / zero-loss int. = 0.35; gain change factor = 581; 45 sweeps 20 ms dwell

 

Nd2O3(0-0170eV)_640x480
   

Nd2O3 thin film (0 – 170 eV)

Material analyzed: Nd2O3

Related elements: Neodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 170

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 10 sweeps 16.67 ms dwell; and several single channel intensity glitches in spectrum

 

Nd2O3(0-0380eV)_640x480
   

Nd2O3 thin film (0 – 380 eV)

Material analyzed: Nd2O3

Related elements: Neodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.13e9; total elastic int. / zero-loss int. = 0.55; gain change factor = 634; 10 sweeps 20 ms dwell

 

Nd2O3(0-0890eV)_640x480
   

Nd2O3 thin film (0 – 890 eV)

Material analyzed: Nd2O3

Related elements: Neodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 890

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 20 ms dwell

 

Nd2O3(0750-1760eV)_640x480
   

Nd2O3 thin film (750 – 1760 eV)

Material analyzed: Nd2O3

Related elements: Neodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 750 – 1760

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 30 sweeps 20 ms dwell

 

NiO thin film (0-180 eV)
   

NiO thin film (0 – 180 eV)

Material analyzed: NiO

Related elements: Nickel, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 20 ms dwell

 

NiO thin film (0-960 eV)
   

NiO thin film (0 – 960 eV)

Material analyzed: NiO

Related elements: Nickel, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 960

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.50e9; total elastic int. / zero-loss int. = 0.47; gain change factor = 1073; 220 sweeps 20 ms dwell

 

Ni thin film (400 - 1410 eV)
   

NiO thin film (400 – 1410 eV)

Material analyzed: NiO

Related elements: Nickel, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 400 – 1410

Collection semi-angle effective (mrad): 1.5

 

Notes: Serial EELS; 30 sweeps 20 ms dwell

 

Nb2O5 particle on holey C film (0 – 180 eV)
   

Nb2O5 particle on holey C film (0 – 180 eV)

Material analyzed: Nb2O5

Related elements: Niobium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 22 sweeps 10 ms dwell

 

Nb2O5 particle on holey C film (0 - 920 eV)
   

Nb2O5 particle on holey C film (0 – 920 eV)

Material analyzed: Nb2O5

Related elements: Niobium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 8.16e8; total elastic int. / zero-loss int. = 0.30; gain change factor = 206; 120 sweeps 20 ms dwell

 

Nb2O5 particle on holey C film (2170 - 3190 eV)
   

Nb2O5 particle on holey C film (2170 – 3190 eV)

Material analyzed: Nb2O5

Related elements: Niobium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 2170 – 3190

Collection semi-angle effective (mrad): 15

 

Notes: Serial EELS; total elastic int. / zero-loss int. = 0.2

 

PdO(0-0180eV)
   

PdO thin film (0 – 180 eV)

Material analyzed: PdO

Related elements: Palladium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 10 ms dwell; all analog

 

PdO(0-0920eV)
   

PdO thin film (0 – 920 eV)

Material analyzed: PdO

Related elements: Palladium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; C contamination; zero-loss peak intensity = 1.34e9; total elastic int. / zero-loss int. = 0.33; gain change factor = 382; 190 sweeps 10 ms dwell

 

PdO(2950-3960eV)
   

PdO thin film (2950 – 3960 eV)

Material analyzed: PdO

Related elements: Palladium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 2950 – 3960

Collection semi-angle effective (mrad): 15

 

Notes: Serial EELS; total elastic int. / zero-loss int. = 0.20

 

Pr6O11(0-0380eV)
   

Pr6O11 thin film (0 – 380 eV)

Material analyzed: Pr6O11

Related elements: Praseodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.09e8; total elastic int. / zero-loss int. = 0.63; gain change factor = 826; 15 sweeps 20 ms dwell

 

Pr6O11(0-0900eV)
   

Pr6O11 thin film (0 – 900 eV)

Material analyzed: Pr6O11

Related elements: Praseodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 900

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

Pr6O11(0800-1350eV)
   

Pr6O11 thin film (800 – 1350 eV)

Material analyzed: Pr6O11

Related elements: Praseodymium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 800 – 1350

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 30 sweeps 20 ms dwell

 

Rh2O3(0-0180eV)
   

Rh2O3 particle on holey C film (0 – 180 eV)

Material analyzed: Rh2O3

Related elements: Rhodium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 16.67 ms dwell

 

Rh2O3(0-0900eV)
   

Rh2O3 particle on holey C film (0 – 900 eV)

Material analyzed: Rh2O3

Related elements: Rhodium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 900

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 2.66e9; total elastic int. / zero-loss int. = 0.42; gain change factor = 778; 100 sweeps 20 ms dwell

 

RuO2(0-0180eV)
   

RuO2 particle on holey C film (0 – 180 eV)

Material analyzed: RuO2

Related elements: Ruthenium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 5 sweeps 16.67 ms dwell
 

RuO2(0-0920eV)
   

RuO2 particle on holey C film (0 – 920 eV)

Material analyzed: RuO2

Related elements: Ruthenium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 55 sweeps 20 ms dwell
 

Sm2O3(0-0190eV)
   

Sm2O3 thin film (0 – 190 eV)

Material analyzed: Sm2O3

Related elements: Samarium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 190

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.46e9; total elastic int. / zero-loss int. = 0.20; gain change factor = 1349; 15 sweeps 20 ms dwell

 

Sm2O3(0-0470eV)
   

Sm2O3 thin film (0 – 470 eV)

Material analyzed: Sm2O3

Related elements: Samarium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 470

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

Sm2O3(0-0960eV)
   

Sm2O3 thin film (0 – 960 eV)

Material analyzed: Sm2O3

Related elements: Samarium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 960

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

Sm2O3(0820-1840eV)
   

Sm2O3 thin film (820 – 1840 eV)

Material analyzed: Sm2O3

Related elements: Samarium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 820 – 1840

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

Sc2O3(0-0180eV)
   

Sc2O3 thin film (0 – 180 eV)

Material analyzed: Sc2O3

Related elements: Scandium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 7 sweeps 16.67 ms dwell

 

Sc2O3(0-0950eV)
   

Sc2O3 thin film (0 – 950 eV)

Material analyzed: Sc2O3

Related elements: Scandium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.98e8; total elastic int. / zero-loss int. = 0.34; gain change factor = 727; 35 sweeps 30 ms dwell

 

Sc2O3(0380-0470eV)
   

Sc2O3 thin film (380 – 470 eV)

Material analyzed: Sc2O3

Related elements: Scandium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 380 – 470

Collection semi-angle effective (mrad): 2

 

Notes: Serial EELS; 15 sweeps 30 ms dwell

 

SiO2(0-0460eV)
   

SiO2 foil, ion milled (0 – 460 eV)

Material analyzed: SiO2

Related elements: Silicon, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 0 – 460

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.73e8; total elastic int. / zero-loss int. = 0.44; gain change factor = 1095

 

SiO2(1290-2300eV)
   

SiO2 foil, ion milled (1290 – 2300 eV)

Material analyzed: SiO2

Related elements: Silicon, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 1290 – 2300

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1e10

 

SrO(0-0170eV)
   

SrO on holey C film (0 – 170 eV)

Material analyzed: SrO

Related elements: Strontium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 170

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; originally SrCO3 particles, reduced to SrO by irradiation; 7 sweeps 16.67 ms dwell

 

SrO(0-0920eV)
   

SrO on holey C film (0 – 920 eV)

Material analyzed: SrO

Related elements: Strontium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; originally SrCO3 particles, reduced to SrO by irradiation; zero-loss peak intensity = 6.82e8; total elastic int. / zero-loss int. = 0.94; gain change factor = 633; 20 ms dwell; 40 sweeps

 

SrO(1820-2840eV)
   

SrO on holey C film (1820 – 2840 eV)

Material analyzed: SrO

Related elements: Strontium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 1820 – 2840

Collection semi-angle effective (mrad): 21

 

Notes: Serial EELS; originally SrCO3 particles, reduced to SrO by irradiation; total elastic int. / zero-loss int. = 0.2

 

TaOX(0-0180eV)
   

Ta oxide amorphous thin film (0 – 180 eV)

Material analyzed: TaO

Related elements: Oxygen, Tantalum

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 ms dwell 8 sweeps

 

TaOX(0-3910eV)
   

Ta oxide amorphous thin film (0 – 3910 eV)

Material analyzed: TaO

Related elements: Oxygen, Tantalum

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 3910

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.56e9; total elastic int. / zero-loss int. = 0.37; gain change factor = 395; 60 ms dwell; 60 sweeps; fuzzy rings

 

Tb2O3(0-0380eV)
   

Tb2O3 thin film (0 – 380 eV)

Material analyzed: Tb2O3

Related elements: Terbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 9.21e8; total elastic int. / zero-loss int. = 0.78; gain change factor = 641; 15 sweeps 20 ms dwell

 

Tb2O3(0-0950eV)
   

Tb2O3 thin film (0 – 950 eV)

Material analyzed: Tb2O3

Related elements: Terbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 12 sweeps 20 ms dwell

 

Tb2O3(0-1950eV)
   

Tb2O3 thin film (0 – 1950 eV)

Material analyzed: Tb2O3

Related elements: Terbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 1950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 ms dwell; 50 sweeps

 

Tb2O3(1000-2010eV)
   

Tb2O3 thin film (1000 – 2010 eV)

Material analyzed: Tb2O3

Related elements: Terbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 1000 – 2010

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 30 ms dwell

 

Tm2O3(0-0380eV)
   

Tm2O3 thin film (0 – 380 eV)

Material analyzed: Tm2O3

Related elements: Thulium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.30e9; total elastic int. / zero-loss int. = 0.41; gain change factor = 788; 12 sweeps 20 ms dwell 

 

Tm2O3(0-0950eV)
   

Tm2O3 thin film (0 – 950 eV)

Material analyzed: Tm2O3

Related elements: Thulium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 23 sweeps 20 ms dwell

 

Tm2O3(1350-1860eV)
   

Tm2O3 thin film (1350 – 1860 eV)

Material analyzed: Tm2O3

Related elements: Thulium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 1350 – 1860

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 20 ms dwell

 

Sn(0-0180eV)
   

Sn thin film (0 – 180 eV)

Material analyzed: Sn

Related elements: Tin

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 16.67 ms dwell; all analog

 

Sn(0-0910eV)
   

Sn thin film (0 – 910 eV)

Material analyzed: Sn

Related elements: Tin

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 910

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 6.44e8; total elastic int. / zero-loss int. = 0.48; gain change factor = 594; 70 sweeps 16.67 ms dwell

 

TiO2(0-0180eV)
   

TiO2 thin film (0 – 180 eV)

Material analyzed: TiO2

Related elements: Titanium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 10 sweeps 16.67 ms dwell

 

TiO2(0-960eV)
   

TiO2 thin film (0 – 960 eV)

Material analyzed: TiO2

Related elements: Titanium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 960

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 6.20e8; total elastic int. / zero-loss int. = 0.51; gain change factor = 658; 40 sweeps 20 ms dwell

 

TiO2(0430-0630eV)
   

TiO2 thin film (430 – 630 eV)

Material analyzed: TiO2

Related elements: Titanium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 430 – 630

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 20 ms dwell

 

UOX(0-0180eV) with GC
   

U oxide on holey C film with GC (0 – 180 eV)

Material analyzed: UO

Related elements: Uranium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; mixed U oxide particles; zero-loss peak intensity = 1.08e9; total elastic int. / zero-loss int. = 0.19; gain change factor = 243; 10 ms dwell

 

UOX(0-0180eV) without GC
   

U oxide on holey C film with GC (0 – 180 eV)

Material analyzed: UO

Related elements: Uranium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; mixed U oxide particles; 20 sweeps; analog only

 

Yb2O3(0-0380eV)
   

Yb2O3 thin film (0 – 380 eV)

Material analyzed: Yb2O3

Related elements: Ytterbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.92e9; total elastic int. / zero-loss int. = 0.24; gain change factor = 1234; 25 sweeps 20 ms dwell

 

Yb2O3(0-0380eV)
   

Yb2O3 thin film (1350 – 2360 eV)

Material analyzed: Yb2O3

Related elements: Ytterbium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 1350 – 2360

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 30 sweeps 20 ms

 

Y2O3(0-0180eV)
   

Y2O3 thin film (0 – 180 eV)

Material analyzed: Y2O3

Related elements: Yttrium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 ms dwell 5 sweeps

 

Y2O3(0-0950eV)
   

Y2O3 thin film (0 – 950 eV)

Material analyzed: Y2O3

Related elements: Yttrium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 8.28e8; total elastic int. / zero-loss int. = 0.73; gain change factor = 594; 35 sweeps 30 ms dwell

 

Y2O3(1880-2890eV)
   

Y2O3 thin film (1880 – 2890 eV)

Material analyzed: Y2O3

Related elements: Yttrium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 1880 – 2890

Collection semi-angle effective (mrad): 21

 

Notes: Serial EELS; total elastic int. / zero-loss int. = 0.4

 

ZrO2(0-0180eV)
   

ZrO2 thin film (0 – 180 eV)

Material analyzed: ZrO2

Related elements: Zirconium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 10 ms dwell

 

ZrO2(0-0920eV)
   

ZrO2 thin film (0 – 920 eV)

Material analyzed: ZrO2

Related elements: Zirconium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 920

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 7.72e8; total elastic int. / zero-loss int. = 0.26; gain change factor = 211; 110 sweeps 20 ms dwell

 

ZrO2(2000-3020eV)
   

ZrO2 thin film (2000 – 3020 eV)

Material analyzed: ZrO2

Related elements: Zirconium, Oxygen

Data contributor: Gatan

Beam energy (keV): 120

Nominal energy range (eV): 2000 – 3020

Collection semi-angle effective (mrad): 15

 

Notes: Serial EELS; total elastic int. / zero-loss int. = 0.3

 

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