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Lutetium

Element density: 9.84 g/cm3
Electron configuration: [Xe]4f145d16s2
Oxidation states: +3

Lutetium

Edges

Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research. 
 

 

Major edges

L3

9244

 

 

M4

1639

 

Major_Delayed Minimum

M5

1589

 

Major_Delayed Minimum

N4

195

 

Major_Very Delayed

N5

195

 

Major_Very Delayed

O2,3

28

Major_Broad Peak
Major_Delayed Minimum

 

Minor edges

L1

10870

 

 

L2

10349

 

 

M1

2491

 

Very Weak_Abrupt Onset

M2

2264

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

M3

2024

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N1

506

 

Very Weak_Abrupt Onset

N2

410

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N3

359

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

O1

57

 

Very Weak_Abrupt Onset

Considerations

Sharp M4,5-edge allow for trace analysis.

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Related spectral data

Lu2O3 thin film (0 – 380)
   

Lu2O3 thin film (0 – 380 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.30e9; total elastic int. / zero-loss int. = 0.36; gain change factor = 680; 20 sweeps 10 ms dwell

 

Lu2O3 thin film (0 – 900)
   

Lu2O3 thin film (0 – 900 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 900

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 20 ms dwell

 

Lu2O3 thin film (0 – 1960)
   

Lu2O3 thin film (0 – 1960 eV)

Material analyzed: Lu2O3

Related elements: Lutetium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 1960

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 50 sweeps 10 ms dwell

 

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