Application Note
Achieving ~1 Å resolution in Tb3Sc2Al3O12 STEM EELS mapping with GIF Continuum K3
August 1, 2024
Aluminum
Element density: 2.70 g/cm3
Electron configuration: [Ne]3s13p1
Oxidation states: +3
Edges
Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.
Major edges | |||
K | 1560 |
|  |
L2,3 | 73 |  |  |
Minor edges | |||
L1 | 118 |
| |
Considerations
The L-edge of Al shows strong variation in ELNES especially for minerals. Its low energy often makes edge extraction problematic. A 1st order log-polynomial is often the best background model. Thin specimen (<0.5 mfp) and/or plural scattering deconvolution is often useful.
The K-edge of Al is better suited for compositions mapping and quantification, but often lies near the stay emission artifact Schottky emitters. Be sure the collection angle is sufficient.
The plasmon peak of Al metal is very sharp and its energy can be measured with high precision. Changes in local temperature and alloying have been be detected and quantified via the energy shift.
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Related spectral data
Al polycrystalline film (0 – 180 eV)
Material analyzed: Al
Related elements: Aluminum
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 - 180
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; 5 sweeps 16.67 ms dwell
Al polycrystalline film (0 – 450 eV)
Material analyzed: Al
Related elements: Aluminum
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 150
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; slightly oxidized; zero-loss peak intensity = 8.19e8; total elastic int. / zero-loss int. = 0.17; gain change = 522; 25 sweeps 20 ms dwell
Al polycrystalline film (0 – 3920 eV)
Material analyzed: Al
Related elements: Aluminum
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 3920
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; slightly oxidized; 60 sweeps 10 ms dwell
Al2O3 thin film (0 – 450 eV)
Material analyzed: Al2O3
Related elements: Aluminum, Oxygen
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 450
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; zero-loss peak intensity = 7.84e8; total elastic int. / zero-loss int. = 0.18; gain change factor = 654; 20 sweeps 20 ms dwell
Al2O3 thin film (0 – 3910 eV)
Material analyzed: Al2O3
Related elements: Aluminum, Oxygen
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 3910
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; zero-loss peak intensity = 7.33e9; total elastic int. / zero-loss int. = 0.18; gain change factor = 401; 100 sweeps 10 ms dwell
Applications
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