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Copper

Element density: 8.92 g/cm3
Electron configuration: [Ar]3d104s1

Oxidation states: +1,2

Copper

Edges 

Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.

 

 

Major edges

K

8979

 

Minor_Abrupt Onset

L2

951

Major_Sharp Peak
Major_Delayed Minimum

L3

931

Major_Sharp Peak
Major_Delayed Minimum

M2,3

74

Minor_Broad Peak
Major_Delayed Minimum

 

Minor edges

L1

1097

 

Minor_Abrupt Onset

M1

120

 

Very Weak_Abrupt Onset

Considerations

Rich ELNES structure in L2,3-edges. White line ratio and energy shift used to determine oxidation state. Metallic state does not have white lines due to filling of d-state. White line appearance is sensitive measure of initial oxidation.

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Related spectral data

Cu thin film (0 – 170 eV)
   

Cu thin film (0 – 170 eV)

Material analyzed: Cu

Related elements: Copper

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 0 – 170

Collection semi-angle effective (mrad): 2

 

Notes: Serial EELS; not in atlas; 15 sweeps 20 ms dwell; analog only

 

Cu thin film (0 – 180 eV)
   

Cu thin film (0 – 180 eV)

Material analyzed: Cu

Related elements: Copper

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 180

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 15 sweeps 16.67 ms dwell

 

Cu thin film (0 – 1930 eV)
   

Cu thin film (0 – 1930 eV)

Material analyzed: Cu

Related elements: Copper

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 1930

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 90 sweeps 20 ms dwell

 

Cu metal thin film (820 – 1320 eV)
   

Cu metal thin film (820 – 1320 eV)

Material analyzed: Cu

Related elements: Copper

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 820 – 1320

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 1 sweep 500 ms dwell

 

CuO thin film (0 – 1930 eV)
   

CuO thin film (0 – 1930 eV)

Material analyzed: CuO

Related elements: Copper, Oxygen

Data contributor: Gatan

Beam energy (keV): 1

Nominal energy range (eV): 0 – 1930

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 100 sweeps 20 ms dwell

 

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