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Holmium

Element density: 8.80 g/cm3
Electron configuration: [Xe]4f116s2
Oxidation states: +3

Holmium

Edges 

Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.

 

 

Major edges

L3

8071

 

 

M4

1392

Major_Sharp Peak
Major_Delayed Minimum

M5

1351

Major_Sharp Peak
Major_Delayed Minimum

N4.5

161

Major_Broad Peak
Major_Delayed Minimum

O2,3

20

Major_Broad Peak
Major_Delayed Minimum

 

Minor edges

L1

9394

 

 

L2

8918

 

 

M1

2128

 

Very Weak_Abrupt Onset

M2

1923

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

M3

1741

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N1

436

 

Very Weak_Abrupt Onset

N2

344

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N3

307

Intermittent_Sharp Peak

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Very Weak_Delayed Minimum

O1

51

 

Very Weak_Abrupt Onset

Considerations

Sharp M4,5-edges allow for trace analysis.

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Related spectral data

Ho2O3 thin film (0 – 390 eV)
   

Ho2O3 thin film (0 – 390 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 390

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 3.32e9; total elastic int. / zero-loss int. = 0.20; gain change factor = 826; 25 sweeps 20 ms dwell

 

Ho2O3 thin film (0 – 950 eV)
   

Ho2O3 thin film (0 – 950 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 166 ms dwell

 

Ho2O3 thin film (1200 – 1710 eV)
   

Ho2O3 thin film (1200 – 1710 eV)

Material analyzed: Ho2O3

Related elements: Holmium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 1200 – 1710

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 25 sweeps 20 ms dwell

 

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