Application Note
The effect of convergence angle on strain measurement precision
February 1, 2025
Silicon
Element density: 2.33 g/cm3
Electron configuration: [Ne]3s13p2
Oxidation states: +2,4/-4
Edges
Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.
Major edges | |||
|---|---|---|---|
K | 1839 |
|  |
L2,3 | 99 |  |  |
Minor edges | |||
|---|---|---|---|
L1 | 149 |
| |
Considerations
Both K- and L-edges are easily accessible and provide rich fine structure and chemical shifts. L2,3 ELNES very useful in understanding SI based devices and minerals. Sharp low-loss features.
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Related spectral data
Si single crystal, ion milled (0 – 180 eV)
Material analyzed: Si
Related elements: Silicon
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 180
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; 7 sweeps 16.67 ms dwell; analog only
Si single crystal, ion milled (0 – 450 eV)
Material analyzed: Si
Related elements: Silicon
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 450
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; zero-loss peak intensity = 6.93e9; total elastic int. / zero-loss int. = 0.29; gain change factor = 561; 25 sweeps 20 ms dwell
Si single crystal, ion milled (0 – 3910 eV)
Material analyzed: Si
Related elements: Silicon
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 3910
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; 150 sweeps 10 ms dwell
SiO2 foil, ion milled (0 – 460 eV)
Material analyzed: SiO2
Related elements: Silicon, Oxygen
Data contributor: Gatan
Beam energy (keV): 120
Nominal energy range (eV): 0 – 460
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; zero-loss peak intensity = 1.73e8; total elastic int. / zero-loss int. = 0.44; gain change factor = 1095
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