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Cerium

Element density: 6.69 g/cm3
Electron configuration: [Xe]4f15d16s2
Oxidation states: +3,4

Cerium

Edges

Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.

 

 

Major edges  

L3

5723

 

 

M4

901

Major_Sharp Peak
Major_Delayed Minimum

M5

883

Major_Sharp Peak
Major_Delayed Minimum

N4,5

110

Major_Broad Peak
Major_Delayed Minimum

O2,3

20

Major_Broad Peak
Major_Delayed Minimum

 

Minor edges

L1

6549

 

 

L2

6164

 

 

M1

1435

 

Very Weak_Abrupt Onset

M2

1273

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

M3

1185

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N1

290

 

Very Weak_Abrupt Onset

N2

233

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

N3

207

Intermittent_Sharp Peak
Very Weak_Delayed Minimum

O1

38

 

 

Considerations

Sharp M4,5-edges allow for trace analysis.

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Related spectral data

CeO2 thin film (0 – 80)
   

CeO2 thin film (0 – 80 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 80

Collection semi-angle effective (mrad): 0

 

Notes: Serial EELS; zero-loss peak intensity = 1.27e9; total elastic int. / zero-loss int. = 0.25; gain change factor = 874; contamination; 20 sweeps 20 ms dwell

 

CeO2 thin film (0 – 380)
   

CeO2 thin film (0 – 380 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 380

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; zero-loss peak intensity = 1.27e9; total elastic int. / zero-loss int. = 0.25; gain change factor = 874; contamination; 20 sweeps 20 ms dwell

 

CeO2 thin film (0 – 950 eV)
   

CeO2 thin film (0 – 950 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 0 – 950

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 45 sweeps 30 ms dwell

 

CeO2 thin film (350 – 1360 eV)
   

CeO2 thin film (350 – 1360 eV)

Material analyzed: CeO2

Related elements: Cerium, Oxygen

Data contributor: Gatan

Beam energy (keV): 200

Nominal energy range (eV): 350 – 1360

Collection semi-angle effective (mrad): 100

 

Notes: Serial EELS; 20 sweeps 30 ms dwell

 

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