Resources

Showing 121-130 of 144

Seeing the atoms more clearly: STEM imaging from the Crewe era to today

Publication

Ultramicroscopy

Pennycook, S. J.

This review covers the development of scanning transmission electron microscopy from the innovations of Albert Crewe to the two-dimensional spectrum imaging in the era of aberration correction.
Gentle STEM: ADF imaging and EELS at low primary energies

Publication

Ultramicroscopy

Krivanek, O. L.; Dellby, N.; Murfitt, M. F.; Chisholm, M. F.; Pennycook, T. J.; Suenaga, K.; Nicolosi, V.

Aberration correction of the scanning transmission electron microscope (STEM) has made it possible to reach probe sizes close to 1 Å at 60 keV, an operating energy that avoids direct knock-on damage in materials consisting of light atoms such as B, C, N and O.
Atom-by-atom spectroscopy at graphene edge

Publication

Nature

Suenaga, K.; Koshino, M.

The properties of many nanoscale devices are sensitive to local atomic configurations, and so elemental identification and electronic state analysis at the scale of individual atoms is becoming increasingly important.
Dose-limited spectroscopic imaging of soft materials by low-loss EELS in the scanning transmission electron microscope

Publication

Micron

Yakovlev, S.; Libera, M.

Spectroscopic imaging in the scanning transmission electron microscope (STEM) using spatially resolved electron energy-loss spectroscopy (EELS) provides one of the few ways to quantitatively measure the real-space nanoscale morphology of soft materials such as polymers and biological tissue.
Arsenic dopant mapping in state-of-the-art semiconductor devices using electron energy-loss spectroscopy

Publication

Micron

Servanton, G.; Pantel, R.

Knowledge of the dopant distribution in nanodevices is critical for optimising their electrical performances.
Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Publication

Ultramicroscopy

Häussler, D.; Houben, L.; Essig, S.; Kurttepeli, M.; Dimroth, F.; Dunin-Borkowski, R. E.

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells.
Four-dimensional STEM-EELS: Enabling nano-scale chemical tomography

Publication

Ultramicroscopy

Jarausch, K.; Thomas, P.; Leonard, D. N.; Twesten, R.; Booth, C. R.

Advances in electron-based instrumentation have enabled the acquisition of multidimensional data sets for exploring the unique structure-property relationship of nanomaterials.
Seeing and measuring in colours: Electron microscopy and spectroscopies applied to nano-optics

Publication

Comptes Rendus Physique

Kociak, M,; Stéphan, O.; Gloter, A.; Zagonel, L. F.; Tizei, L. H. G.; Tencé, M.; March, K.; Blazit, J. D.; Mahfoud, Z.; Losquin, A.; Meuret, S.; Colliex, C.
Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime

Publication

Micron

Wu, C. T.; Chu, M. W.; Chen, L. C.; Chen, K. H.; Chen, C. W.; Chen, C. H.

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A ele
Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials

Publication

Micron

Borckt, G.; Lakner, H.

The low loss region of an EEL spectrum (

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